INTERFACE PROPERTIES OF CIGS(S)/BUFFER LAYERS FORMED BY THE Cd- PARTIAL ELECTROLYTE PROCESS
نویسندگان
چکیده
A chemical-bath treatment that does not form a CdS layer has been used on CIGS absorbers made at the National Renewable Energy Laboratory (NREL). The resultant cells have moderate to high efficiency, with improved current collection at shorter wavelengths. Room temperature quantum efficiency (QE) and capacitance-voltage (CV) results indicate that the different surface treatments yield electro-optical differences in the bulk of the absorber. Room temperature current density-voltage (JV) and AMPS modeling results are used to compare and contrast the results of the surface treatments, primarily from the NREL devices.
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